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Gain: 20.9 dB
Technology: Si
Unit Weight: 50.800 mg
Output Power: 4.9 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Operating Frequency: 136 MHz to 941 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 28 W
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 4 S
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
