NXP A5G35S008NT6 RF Power MOSFET Airfast RF Power GaN Transistor, 3300-3800 MHz, 27 dBm Avg., 48 V

Gain: 27 dB

Technology: GaN-on-Si

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 16 V

Maximum Operating Frequency: 3.8 GHz

Minimum Operating Frequency: 3.3 GHz

Id - Continuous Drain Current: 1.52 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 2.5 V