NXP A2V07H525-04NR6 RF Power MOSFET Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V

Gain: 17.5 dB

Technology: Si

Unit Weight: 5.289 g

Output Power: 120 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 595 MHz to 851 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V