Nexperia PSMNR90-40YLHX MOSFETs N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E

Fall Time: 33 ns

Rise Time: 46 ns

Technology: Si

Unit Weight: 93.270 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 120 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 333 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 59 ns

Id - Continuous Drain Current: 300 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 940 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.35 V