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Nexperia PSMN1R4-100CSFJ MOSFETs N-channel 30 V, 1.4 mohm logic level MOSFET in LFPAK56 using NextPowerS3 Technology

ModelPSMN1R4-100CSFJ
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Fall Time: 84 ns

Rise Time: 63 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 255 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 935 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 67 ns

Typical Turn-Off Delay Time: 157 ns

Id - Continuous Drain Current: 355 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.35 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V

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