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Nexperia PMZ550UNEYL MOSFETs PMZ550UNE/SOT883/XQFN3

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Technology: Si

Unit Weight: 0.870 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 600 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 590 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 670 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 950 mV

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