Nexperia PMV65XPVL MOSFETs 30 V, P-channel Trench MOSFET

Fall Time: 68 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel Trench MOSFET

Qg - Gate Charge: 7.7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 833 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 135 ns

Id - Continuous Drain Current: 2.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 74 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 470 mV