Nexperia PMCXB900UEZ MOSFETs PMCXB900UE/SOT1216/DFN1010B-6

Fall Time: 51 ns, 6 ns

Rise Time: 9.2 ns, 5 ns

Technology: Si

Unit Weight: 1.200 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 700 pC, 2.1 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 380 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5.6 ns, 2.3 ns

Typical Turn-Off Delay Time: 19 ns, 13.5 ns

Id - Continuous Drain Current: 600 mA, 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S, 480 mS

Rds On - Drain-Source Resistance: 470 mOhms, 1.02 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV, 950 mV