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Fall Time: 3 ns, 3.7 ns
Rise Time: 3 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: Complementary N/P-Channel Trench MOSFET
Qg - Gate Charge: 600 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1 ns
Typical Turn-Off Delay Time: 5 ns, 6 ns
Id - Continuous Drain Current: 570 mA, 2.3 A, 930 mA, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.2 S, 1.9 S
Rds On - Drain-Source Resistance: 320 mOhms, 770 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 1 V
