Nexperia PMBT6429-QR BJTs - Bipolar Transistors PMBT6429-Q/SOT23/TO-236AB

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 1250 at 0.1 mA, 5 V

Gain Bandwidth Product fT: 700 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 55 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 500 at 0.1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV