Nexperia PMBT3946VPN,115 BJTs - Bipolar Transistors 40 V, 200 mA NPN/PNP general-purpose double transistor

Width: 1.3 mm

Height: 0.6 mm

Length: 1.7 mm

Technology: Si

Unit Weight: 2.700 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 60 at 100 uA, 1 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V, 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 120 mV, 165 mV