Nexperia PHPT61002PYCLHX BJTs - Bipolar Transistors 100 V, 2 A PNP high power bipolar transistor

Technology: Si

Unit Weight: 66.506 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 260

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 300 mV