Nexperia PBSS9410PA,115 BJTs - Bipolar Transistors PBSS9410PA/SOT1061/HUSON3

Width: 2.1 mm

Height: 0.61 mm

Length: 2.1 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 295

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 2.7 A

Maximum DC Collector Current: 2.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 290 mV