Nexperia PBSS5420D,115 BJTs - Bipolar Transistors 20 V, 4 A PNP low VCEsat transistor

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 20 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.5 W

DC Current Gain hFE Max: 250 at 500 mA, 2 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V