Nexperia PBSS4230PAN-QX BJTs - Bipolar Transistors SOT1118/HUSON6 NPN/NPN TRANS

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 380

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 220 mV