Nexperia PBSS2515YPN,115 BJTs - Bipolar Transistors 15 V low VCEsat NPN/PNP transistor

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5.467 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 200 at 10 mA, 2 V

Gain Bandwidth Product fT: 420 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 90 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 250 mV