Nexperia PBHV9115X,115 BJTs - Bipolar Transistors 150 V, 1 A PNP high-voltage low VCEsat transistor

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 520 mW

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 200 mV