Nexperia PBHV3160Z-QX BJTs - Bipolar Transistors SOT223 600V .1A PNP HI VOLT

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.4 W

Gain Bandwidth Product fT: 38 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 600 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 150 mV