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Nexperia NX3008NBKMB,315 MOSFETs 30 V, 350 mA dual N-channel Trench MOSFET

ModelNX3008NBKMB,315
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Technology: Si

Unit Weight: 0.600 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 680 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 715 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 530 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V

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