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Nexperia NHUMB2-QX BJTs - Bipolar Transistors NHUMB2-Q/SOT363/SC-88

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Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 235 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 80 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 100 mV

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