Nexperia NGW50T65H3DFPQ IGBTs 650 V, 50 A trench field-stop IGBT with full rated silicon diode
ManufacturerNexperia(View more products from this manufacturer)
ModelNGW50T65H3DFPQ
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Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 340 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.72 V
Continuous Collector Current at 25 C: 80 A
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