Nexperia GANB4R8-040CBAZ GaN FETs 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
ManufacturerNexperia(View more products from this manufacturer)
ModelGANB4R8-040CBAZ
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Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 15.8 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13 W
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
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