Nexperia GAN039-650NBBHP GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
ManufacturerNexperia(View more products from this manufacturer)
ModelGAN039-650NBBHP
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Technology: GaN
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Cascode
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Qg - Gate Charge: 30 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 39 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
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