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Nexperia BSH103,235 MOSFETs BSH103/SOT23/TO-236AB

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Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 2.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 850 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 400 mV

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