Nexperia BC868,115 BJTs - Bipolar Transistors BC868/SOT89/MPT3

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 50 at 5 mA, 10 V

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 32 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V, 40 at 2 A, 1 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 600 mV