Nexperia BC68PASX BJTs - Bipolar Transistors 20 V, 2 A PNP medium power transistors

Technology: Si

Unit Weight: 7.584 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 420 mW

DC Current Gain hFE Max: 375 at 500 mA, 1 V

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 32 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 85 at 500 mA, 1 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 600 mV