Nexperia BC56PAS-QX BJTs - Bipolar Transistors 80 V, 1 A NPN medium power transistors

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.65 W

DC Current Gain hFE Max: 250 at 150 mA, 2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV