Nexperia 2PB1219AR,135 BJTs - Bipolar Transistors 2PB1219AR/SOT323/SC-70

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 120 at 150 mA, 10 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V