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Microsemi Jantxv2N6193U3 BJTs - Bipolar Transistors Power BJT

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

DC Current Gain hFE Max: 240

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 200 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 100 V

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