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Microsemi JANTX2N720A BJTs - Bipolar Transistors 80V 500mA 500mW NPN Power BJT THT

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Technology: Si

Unit Weight: 763.611 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 5 V

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