Microsemi Jan2N3740 BJTs - Bipolar Transistors 60V 4A 25W PNP Power BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 120 at 250 mA, 1 VDC

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 250 mA, 1 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 400 mV