Microsemi Jan2N3716 BJTs - Bipolar Transistors 80V 10A 5W NPN Power BJT THT
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJan2N3716
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Technology: Si
Unit Weight: 68.725 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 5 W
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 80 V
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 1 V
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