Microsemi Jan2N2907AUB/TR BJTs - Bipolar Transistors 60V 600mA 500mW PNP 3 Pin CER Small-Signal BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 450 at 1 mA, 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 500 mA, 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 400 mV