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Microsemi APT31N80JC3 MOSFET

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Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 355nC

Power consumption: 833W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 31A

Input Capacitance (Ciss): 4510pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 145mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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