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Microsemi APT31N60BCSG MOSFET

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Vgs(th): 3.9 V

Vgs (Max): 30V

Gate Charge (Qg): 85nC

Power consumption: 255W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 31A

Input Capacitance (Ciss): 3055pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 100mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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