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Microsemi APT17N80SC3G MOSFET

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Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 90nC

Power consumption: 208W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 17A

Input Capacitance (Ciss): 2250pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 290mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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