Microchip Technology MSC180SMA120B SiC MOSFETS MOSFET SIC 1200 V 180 mOhm TO-247
ModelMSC180SMA120B
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: SiC
Unit Weight: 6 g
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Rds On - Drain-Source Resistance: 180 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts

