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Fall Time: 32 ns
Rise Time: 25 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 55 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 381 W
Vgs - Gate-Source Voltage: - 10 V, + 23 V
Typical Turn-On Delay Time: 34 ns
Typical Turn-Off Delay Time: 50 ns
Id - Continuous Drain Current: 41 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 105 mOhms
Vds - Drain-Source Breakdown Voltage: 3.3 kV
Vgs th - Gate-Source Threshold Voltage: 2.97 V
