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Fall Time: 11 ns, 13 ns
Rise Time: 10 ns, 13 ns
Technology: SiC
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 137 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 303 W
Vgs - Gate-Source Voltage: - 10 V, + 23 V
Typical Turn-On Delay Time: 23 ns, 24 ns
Typical Turn-Off Delay Time: 44 ns, 46 ns
Id - Continuous Drain Current: 64 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 40 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.6 V
