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Gain: 13 dB
Technology: Si
Unit Weight: 12.317 g
Output Power: 150 W
Mounting Style: Through Hole
Number of Channels: 1 Channel
Operating Frequency: 65 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: + 30 V
Id - Continuous Drain Current: 6.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 mS
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 5 V
