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Gain: 13 dB
Fall Time: 4 ns
Rise Time: 6 ns
Technology: Si
Unit Weight: 38 g
Channel Mode: Enhancement
Output Power: 150 W
Mounting Style: Through Hole
Operating Frequency: 65 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: + 30 V
Operating Temperature Range: - 55 C to + 150 C
Id - Continuous Drain Current: 14 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.3 mS
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 5 V
