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Gain: 17 dB
Fall Time: 10 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 19.504 g
Output Power: 750 W
Mounting Style: Screw Mount
Operating Frequency: 40 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 kW
Vgs - Gate-Source Voltage: + 30 V
Operating Temperature Range: - 55 C to + 175 C
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 mS
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 5 V
