Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 17 dB
Fall Time: 10 ns
Rise Time: 6 ns
Technology: Si
Unit Weight: 20.016 g
Channel Mode: Enhancement
Output Power: 750 W
Mounting Style: Screw Mount
Operating Frequency: 40 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 kW
Vgs - Gate-Source Voltage: + 30 V
Operating Temperature Range: - 55 C to + 175 C
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 mS
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 5 V
