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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 625 W
Gate-Emitter Leakage Current: 300 nA
Maximum Gate Emitter Voltage: - 30 V, 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 94 A
