Microchip Technology 2N5666 BJTs - Bipolar Transistors 200V 1.2A 5W NPN Power BJT THT

Technology: Si

Unit Weight: 2.770 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.2 W

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 250 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 400 mV