Microchip Technology 2N3868U4 BJTs - Bipolar Transistors 60V 3mA 1W Power BJT SMT
Model2N3868U4
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 3 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 35
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 1.5 V
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