Microchip Technology 2N3810 BJTs - Bipolar Transistors 60V 50mA 350mW Dual Small-Signal BJT THT

Technology: Si

Unit Weight: 4.735 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 450 at 100 uA, 5 VDC

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at 100 uA, 5 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 250 mV