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Microchip Technology 2N3725 BJTs - Bipolar Transistors 50V Small-Signal BJT

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Gain Bandwidth Product fT: 300 MHz

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 520 mV

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