Microchip Technology 2N3637UB BJTs - Bipolar Transistors 175V 1A 1W 3 Pin CER Small-Signal BJT THT

Width: 2.74 mm

Height: 1.8 mm

Length: 3.25 mm

Technology: Si

Unit Weight: 649 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 175 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 175 V

Collector-Emitter Saturation Voltage: 300 mV