Microchip Technology 2N2896 BJTs - Bipolar Transistors Power BJT
Model2N2896
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 642 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.8 W
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 120 MHz
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 90 V
Collector-Emitter Saturation Voltage: 600 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts